E. Suhendi, M.F. Fadhillah, I. Anjaningsih, S.D. Ulhaq, A. Fadhillah, D. Rusdiana
A tunneling current in bilayer armchair graphene nanoribbon (BAGNR) based tunnel field-effect transistors is modeled by semi-numeric methods. Potential profiles of field-effect transistors are divided into several segments by numerical methods. The Transfer Matrix Method (TMM) is a numerical method used in calculating electron transmittance values. The TMM method was applied to get the electron transmittance values, then the Landauer formula with the Gauss Legendre Quadrature (GLQ) method was applied to generate the tunneling current from TFETs. The tunneling current is calculated by changing a number of variables, namely gate voltage (VG), drainage voltage (VD), temperature, N index, the thickness of the oxide layer and device length. In this study, the calculation of the cut-off frequency on the tunneling fieldeffect transistor was also carried out. The results of the tunneling current calculation show that the greater value of VG can affect the saturation current. The results of the tunneling current calculation show that the higher the temperature, the lower the tunneling current value. The calculation of the tunneling current also shows that the wider the BAGNR, the greater the tunneling current. This is due to the influence of BAGNR width which makes the energy gap (Eg) lower. The value of the cut-off frequency on the BAGNR tunnel field-effect transistor recorded in this study is 3.96-8.9 THz. © 2020 Sumy State University.
Program Studi Fisika, Universitas Pendidikan Indonesia, Bandung, Indonesia
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