L. Hasanah, E. Suhendi, Khairrurijal
Tunelling current calculation on Si/Si1-xGex/Si heterojunction bipolar transistor was carried out by including the coupling between transversal and longitudinal components of electron motion. The calculation results indicated that the coupling between kinetic energy in parallel and perpendicular to S1-xGex barrier surface affected tunneling current significantly when electron velocity was faster than 1x105 m/s. This analytical tunneling current model was then used to study how the germanium concentration in base to Si/Si1-xGex/Si heterojunction bipolar transistor influenced the tunneling current. It is obtained that tunneling current increased as the germanium concentration given in base decreased. © Published under licence by IOP Publishing Ltd.
Department of Physics Education, Indonesia University of Education (UPI), Bandung, Indonesia; Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung, Indonesia
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