Modelling of drain current in tunnelling field-effect transistor based on strained armchair graphene nanoribbons

E. Suhendi; R. Syariati; F.A. Noor; Khairurrijal

doi:10.1088/1757-899X/180/1/012038

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Modelling of drain current in tunnelling field-effect transistor based on strained armchair graphene nanoribbons

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E. Suhendi, R. Syariati, F.A. Noor, Khairurrijal

2017 IOP Conference Series: Materials Science and Engineering Vol. 180 Issue 1 Conference paper Cited by 0 SDG 7

Abstract

A tunnelling field-effect transistor (TFET) based armchair graphenenanoribbons (AGNRs) with variation of uniaxial strain has been modeled. Bandgap of strained AGNR estimated by an extended tight binding method is applied to obtain electrical characteristics of a TFET under the quantum capacitance limit device approximation. Furthermore, the electron transmittance is calculated by utilizing the WKB (Wentzel-Kramers-Brillouin) approach. The obtained transmittance is then used to calculate the drain current by employing the Landauer formula. The results show that strain parameter has significant effect on the current. In other words, the electrical characteristics of AGNR TFET can be tuned by the strain of AGNR. © Published under licence by IOP Publishing Ltd.

Affiliations

Physics of Electronic Materials and Modelling Research Division, Faculty of Mathematics and Natural Sciences Education, Universitas Pendidikan Indonesia, Jalan Dr. Setiabudhi 229, Bandung, 40154, Indonesia; Physics of Electronic Materials Research Division, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jalan Ganesa 10, Bandung, 40132, Indonesia

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