Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

Lilik Hasanah; Endi Suhendi; Yuyu Rahmat Tayubi; Heru Yuwono; Asep Bayu Dani Nandiyanto; Hideki Murakami; K. Khairrurijal

doi:10.1063/1.4941179

Effect of Si interface surface roughness to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor

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Lilik Hasanah, Endi Suhendi, Yuyu Rahmat Tayubi, Heru Yuwono, Asep Bayu Dani Nandiyanto, Hideki Murakami, K. Khairrurijal

2016 AIP Conference Proceedings Vol. 1708 Conference paper Cited by 0 SDG 7SDG 17SDG 16

Abstract

In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si1-xGex/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic. © 2016 AIP Publishing LLC.

Affiliations

Department of Physics Education, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229, Bandung, 40154, Indonesia; Department Kimia, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229, Bandung, 40154, Indonesia; Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, 739-8527, Japan; Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung, 40132, Indonesia

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