I. Hamidah, A. Suhandi, A. Setiawan, P. Arifin
GaNxAs1-x thin films had been successfully grown on semi-insulating GaAs (001) substrates by metal organic chemical vapour deposition (MOCVD) method. The precursors used were trimethylgallium (TMGa), dimethylhydrazine (DMHy), and tris-dimethylaminoarsenic (TDMAAs). GaN xAs1-x thin films of 1.2 - 2.4 μm thick were grown at the total reactor pressure of 50 torr, H2 and N2 flow rate of 300 seem, temperatures range of 560 - 590°C, and the ratio of TDMAAs/TMGa and DMHy/TDMAAs flow rate of 4.5 and 0.8, respectively. The growth rate of GaN xAs1-x thin films are in the range of 0.8 - 1.6 μ/h. The N concentration of GaNxAs1-x thin films was studied by HR-XRD measurements and was calculated using Vegard's law from symmetric and asymmetric reflection. From this study, it found that the N concentration of GaNxAs1-x thin films were in the range of 4.9 and 5.5%. The measured electron mobility using Hall-van der Pauw method is in order of 3270 and 3380 cm2 V-1 s1 at x = 4.9% and 5.5% respectively.
Physics Laboratory, Dept. of Mechanical Engineering, Indonesia University of Education, Bandung 40154, Ji. Dr. Setiabudhi No. 229, Indonesia; Lab. For Electronic Material Physics, Dept. of Physics, Bandung Institute of Technology, Bandung 40132, Jl. Taman Sari No 10, Indonesia
Research at a Glance
Register to unlock
Topics & SDG Alignment
Register to unlock
Collaboration
Register to unlock
Author Profile (Selected)
Register to unlock
References Overview
Register to unlock
Journal & Source
Register to unlock
Metadata & Integrity
Register to unlock