Budi Mulyanti, A. Subagio, H. Sutanto, F.S. Arsyad, P. Arifin, M. Budiman, M. Barmawi
The effect of Mn incorporation into GaN:Mn thin films on their structural property, surface morphology and magnetic property are presented. The GaN:Mn thin films were grown by plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD) using Trimethylgallium (TMGa), nitrogen (N2) and cyclopentadienyl manganese tricarbonyl (CpMnTc) as a source of Ga, N and Mn, respectively. The grown films have Mn concentration as high as 6.6 %. The maximum Mn concentration that still produces single phase GaN:Mn (0002) depends on growth temperature. The highest concentration of Mn atoms which are incorporated in the wurtzite structure substitutionally is 2.5%. Above this concentration, parts of Mn atoms are incorporated into GaN matrix intertitially. The surface roughness of the films determined from the AFM images show that the film with 6.4 % of Mn has a better surface morphology than that of the film with 6.6 % of Mn. The results of magnetization measurements show hysteresis behavior at room temperature. The maximum of magnetic moment is achieved by the film with Mn concentration of 2.5 %. © 2006 IEEE.
Laboratory of Electronic Material Physics, Department of Physics, Institute of Technology Bandung, Bandung 40132, Jl. Ganesha 10, Indonesia; Department of Electrical Engineering Education, Indonesian University of Education, Bandung, Indonesia; Department of Physics, University of Diponegoro, Semarang, Indonesia; Department of Physics, University of Sriwijaya, Palembang, Indonesia
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